Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2005-05-03
2008-07-15
Smoot, Stephen W (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S761000, C257S769000, C257SE23157, C438S655000, C438S683000, C438S686000
Reexamination Certificate
active
07400042
ABSTRACT:
A metallization layer that includes a tantalum layer located on the component, a tantalum silicide layer located on the tantalum layer, and a platinum silicide layer located on the tantalum silicide layer. In another embodiment the invention is a component having a metallization layer on the component. In another embodiment, the metallization layer has a post-annealing adhesive strength to silicon of at least about 100 MPa as measured by a mechanical shear test after exposure to a temperature of about 600° C. for about 30 minutes, and the metallization layer remains structurally intact after exposure to a temperature of about 600° C. for about 1000 hours. The metallization is useful for bonding with brazing alloys.
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Childress Kimiko Jane
Eriksen Odd Harald Steen
Rosemount Aerospace Inc.
Smoot Stephen W
Thompson Hine LLP
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