Substrate voltage generator and method therefor in a semiconduct

Details Substrate voltage generator and method therefor in a semiconduct Substrate voltage generator and method therefor in a semiconduct

1992-11-16

1994-04-19

Pascal, Robert J.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

3072961, 3072968, 307362, 307363, H03K 301

Patent

active

053048598

ABSTRACT:
A semiconductor device having an internal voltage down converter includes a circuit operating with an externally applied power supply voltage, a circuit operating with an internal stepped-down voltage as an operation power supply voltage, and substrate voltage generators for generating a substrate bias voltage according to a state of the internal stepped-down voltage. The present invention makes it possible to stably apply a substrate voltage corresponding to an operation voltage to the substrate region.

REFERENCES:
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patent: 4691304 (1987-09-01), Hori et al.
patent: 4825018 (1989-04-01), Okada et al.
patent: 4922133 (1990-05-01), Iwahashi et al.
patent: 5034625 (1991-07-01), Min et al.
A New on-Chip Voltage Converter for Submicrometer High-Density DRAM's, Furuyama, IEEE Journal of Solid-State Circuits, vol. SC-22, No. 3, Jun. 1987.
Sato et al., "A 20ns Static Column 1Mb DRAM in CMOS Technology," 1986 IEEE International Solid-State Circuits Conference, pp. 254-255.

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