Substrate used for fabrication of thick film circuit

Details Substrate used for fabrication of thick film circuit Substrate used for fabrication of thick film circuit

1991-07-25

1992-07-28

Lesmes, Geroge F.

Stock material or miscellaneous articles

Web or sheet containing structurally defined element or...

Physical dimension specified

428698, 428699, 428702, B32B 1800

Patent

active

051340291

ABSTRACT:
For improvement in heat radiation capability without sacrifice of affinity for a paste, a substrate used for fabrication of a thick film circuit has a multi-level structure having a foundation of an aluminum nitride and a surface film provided on the foundation, and the surface film is formed of an oxygen compound containing silicon atoms.

REFERENCES:
patent: 4517584 (1985-05-01), Matsushita et al.
patent: 4659611 (1987-04-01), Iwase et al.
patent: 4835039 (1989-05-01), Barringer et al.
patent: 4840853 (1989-06-01), Ito et al.
Preliminary program of 7th European Hybrid Microelectronics Conference Paper written by Kuromitsu.

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