Substrate-triggered bipolar junction transistor and ESD...

Details Substrate-triggered bipolar junction transistor and ESD... Substrate-triggered bipolar junction transistor and ESD...

2011-05-31

2011-05-31

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

C438S342000, C438S353000, C438S369000

Reexamination Certificate

active

07951681

ABSTRACT:
An ESD protection circuit using a novel substrate-triggered lateral bipolar junction transistor (STLBJT) for providing a discharging path between power rails. The ESD protection circuit comprises an ESD detection circuit and a STLBJT device. The STLBJT device formed in a P-type substrate includes N-type collector and emitter regions coupled to the power rails, respectively. The substrate region between the collector and emitter regions, on which there is no field oxide device, serves as a base of the STLBJT device. The STLBJT device further includes a first P-type region coupled to the ESD detection circuit and a second P-type region coupled to one of the power rails, which are spatially separated from the collector/emitter regions, respectively. The STLBJT device is turned on by substrate-triggering responsive to the signal coming from the ESD detection circuit and establishes the discharging path between the power rails.

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