Semiconductor device manufacturing: process – Gettering of substrate – By implanting or irradiating
Reexamination Certificate
2007-06-05
2007-06-05
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Gettering of substrate
By implanting or irradiating
C438S513000, C438S520000, C438S528000, C438S585000, C257SE21324, C257SE21497
Reexamination Certificate
active
10500214
ABSTRACT:
A method of hydrogen sintering a substrate including a semiconductor device formed thereon comprises the steps of exciting a processing gas comprising a noble gas and a hydrogen gas to form a plasma comprising hydrogen radicals and hydrogen ions, and exposing the substrate to the plasma. A preferred method comprises forming a gate insulation film on a substrate, forming a polysilicon electrode on the gate insulation film, and exposing the polysilicon electrode to an atmosphere comprising hydrogen radicals and hydrogen ions.
REFERENCES:
patent: 5543336 (1996-08-01), Enami et al.
patent: 5744202 (1998-04-01), Nickel
patent: 5776804 (1998-07-01), Hayashi
patent: 5956581 (1999-09-01), Yamazaki et al.
patent: 6028015 (2000-02-01), Wang et al.
patent: 6258640 (2001-07-01), Miyazaki
patent: 129265 (1984-12-01), None
patent: 58-106837 (1983-06-01), None
patent: 1-214123 (1989-08-01), None
patent: 3-286535 (1991-12-01), None
patent: 10-12625 (1998-01-01), None
patent: 11-330080 (1999-11-01), None
Y. Aoki, et al., “In Situ Substrate Surface Cleaning by Low-Energy Ion Bombardment for High Quality Thin Film Formation”, J. Vac. Sci. Technol. A, Mar./Apr. 1993, pp. 307-313, vol. 11 No. 2, American Vacuum Society.
Katsuyuki Sekine, et al., “Silicon Nitride Film Growth for Advanced Gate Dielectric at Low Temperature Employing High-Density and low-Energy Ion Bombardment”, J. Vac. Sci. Technol. A, Sep./Oct. 1999, pp. 3129-3133, vol. 17, No. 5, American Vacuum Society.
Kotaro Miyatani, et al., “A New Plasma Dry Cleaning Method Applied to Contact and Gate Pre Cleaning”, Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials, 2002, pp. 196-197, Nagoya.
N. Sano, et al., “Improvement of SiO2/Si Interface by Low-Temperature Annealing in Wet Atmosphere”, Appl. Phys. Lett., Apr. 17, 1995, pp. 2107-2109, vol. 66, No. 16, American Institute of Physics.
D. Tchikatilov, et al., “Improvement of SiGe Oxide Grown by Electron Cyclotron Resonance Using H2O Vapor Annealing”, Appl. Phys. Lett., Oct. 21, 1996, pp. 2578-2580, vol. 69, No. 17, American Institute of Physics.
Takuya Sugawara, et al., “Characterization of Ultra Thin Oxynitride Formed by Radical Nitridation with Slot Plane Antenna Plasma”, Extended Abstracts of the 2002 International Conference on Solid Devices and Materials, 2002, pp. 714-715, Nagoya.
Akiko Nara, et al., “A Guideline for Accurate Two-Frequency Capacitance Measurement for ultra-Thin Gate Oxides”, Extended Abstracts of the 2002 International Conference on Solid Devices and Materials, 2002, pp. 452-453, Sendal.
T. Ngal et al., “Improving SiO2/SiGe Intface of SiGe p-metal-oxide-silicon field-effect transistors using water vapor annealing”, Mar. 11, 2002, pp. 1773-1775.
Atsuhiro Tsukune, et al., “Cu Damascene Formation Process”, The 8thSemiconductor Process Symposium, Sep. 20, 1999, pp. 71-79.
Matsuyama Seiji
Sasaki Masaru
Sugawara Takuya
Crowell & Moring LLP
Estrada Michelle
Tokyo Electron Limited
LandOfFree
Substrate treating method and production method for... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Substrate treating method and production method for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Substrate treating method and production method for... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3810801