Substrate treating apparatus and semiconductor device...

Details Substrate treating apparatus and semiconductor device... Substrate treating apparatus and semiconductor device...

2005-10-26

2010-06-08

Quach, Tuan N. (Department: 2893)

Coating apparatus

Gas or vapor deposition

C118S729000, C438S758000, C257SE21001

Reexamination Certificate

active

07731797

ABSTRACT:
A gas flow in a load-lock type preliminary chamber is improved. A load-lock type substrate treating apparatus contains a processing chamber (34) for storing and processing a substrate (1); a preliminary chamber (23) continuously arranged to the processing chamber (31); a substrate holding jig mechanism (40) for carrying in and carrying out a substrate holding jig (50) holding multiple substrates (1), to and from the processing chamber (31); an inert gas supply port (61) for supplying inert gas to the preliminary chamber (23); a first exhaust port (71) provided above the inert gas supply port (61) in the preliminary chamber (23) to exhaust the inert gas: a second exhaust port (81) to draw a vacuum in the preliminary chamber (23); and a controller (100) for performing control so that the inert gas supplied from the inert gas supply port (61) is exhausted only from the first exhaust port (71), while maintaining the preliminary chamber (23) drawn a vacuum from the second exhaust port (81) at a specified pressure after raising the pressure.

REFERENCES:
patent: 6806211 (2004-10-01), Shinriki et al.
patent: 7256370 (2007-08-01), Guiver
patent: 7408225 (2008-08-01), Shinriki et al.
patent: 7559992 (2009-07-01), Suzuki et al.
patent: 2009/0220692 (2009-09-01), Takagi et al.
patent: 2-47828 (1990-02-01), None
patent: 5-8936 (1993-02-01), None
patent: 6-224143 (1994-08-01), None
patent: 2000-58530 (2000-02-01), None

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