Substrate temperature control apparatus for CVD reactors

Details Substrate temperature control apparatus for CVD reactors Substrate temperature control apparatus for CVD reactors

1994-03-15

1996-06-18

Bueker, Richard

Coating apparatus

Gas or vapor deposition

With treating means

118724, 118728, C23C 1600

Patent

active

055273920

ABSTRACT:
One of the critical experimental parameters affecting the quality and gro rate of chemical vapor deposition species, such as, diamond is the substrate temperature. An apparatus and technique for the precise control of the substrate temperature in a chemical vapor deposition environment has been developed. In a preferred embodiment, the technique uses a variable gas mixture in conjunction with the disclosed apparatus of the present invention to precisely control the temperature of the substrate to within at least .+-.20.degree. C. for extended periods of time and over large area substrates on the order of 1" in diameter or larger.

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patent: 5182093 (1993-01-01), Cann
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