Miscellaneous active electrical nonlinear devices – circuits – and – Specific identifiable device – circuit – or system – With specific source of supply or bias voltage
Patent
1994-01-10
2000-08-15
Cunningham, Terry D.
Miscellaneous active electrical nonlinear devices, circuits, and
Specific identifiable device, circuit, or system
With specific source of supply or bias voltage
327 56, 327 55, 327 67, H01L 2500
Patent
active
061042331
ABSTRACT:
A p-well region (16) is formed in the main surface area of an n-type semiconductor substrate (11). A potential (V.sub.BB) which is lower than an externally input potential is applied to the p-well region (16). In the surface area of the p-well region (16), a first impurity diffused layer (12) of n-type to which the externally input potential (Vin) is applied and a second impurity diffused layer (13) of n-type to which a reference potential is applied are formed. The first impurity diffused layer (12) serves as the drain region of a first MOS transistor (Q9) of n-channel formed in the p-well region (16) and the second impurity diffused layer (13) serves as the drain region of a second MOS transistor (Q10) of n-channel which is also formed in the p-well region (16). The first and second MOS transistors (Q9 and Q10) constitute the input section of an input circuit. The input circuit detects the level of the externally input potential (Vin) by comparing the externally input potential (Vin) with the reference potential (Vref).
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Fujii Syuso
Sakurai Kiyofumi
Shimizu Mitsuru
Cunningham Terry D.
Kabushiki Kaisha Toshiba
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