Substrate structure and manufacturing method of the same

Details Substrate structure and manufacturing method of the same Substrate structure and manufacturing method of the same

2005-07-14

2008-08-26

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257SE51040, C977S743000

Reexamination Certificate

active

07417320

ABSTRACT:
A Ti film is pattern-formed on a desired portion on a silicon substrate, and a Co film is formed on the substrate so as to cover the Ti film. CNTs are formed only on a portion, under which the Ti film is formed, of the surface of the Co film at approximately 600° C. by a thermal CVD method. The length of the CNT can be controlled by adjusting the thickness of the Ti film.

REFERENCES:
patent: 6232706 (2001-05-01), Dai et al.
patent: 6514113 (2003-02-01), Lee et al.
patent: 6764874 (2004-07-01), Zhang et al.
patent: 7201627 (2007-04-01), Ohnuma
patent: 2003/0211724 (2003-11-01), Haase
patent: 2005/0079659 (2005-04-01), Duan et al.
patent: 2002-115071 (2002-04-01), None
patent: 2002-530805 (2002-09-01), None
patent: 2003-504857 (2003-02-01), None
patent: 2003-221396 (2003-08-01), None
patent: 2004-67413 (2004-03-01), None

Affiliated with

Also associated with

Rating

Substrate structure and manufacturing method of the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Substrate structure and manufacturing method of the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Substrate structure and manufacturing method of the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4000460