Substrate slew circuit

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

3072965, 3072966, 3072968, 307576, 307578, 307585, H03K 301, H03K 17687

Patent

active

052668436

ABSTRACT:
The described embodiments of the present invention provide a substrate slew circuit that eliminates electron injection. The slew circuit comprises a semiconductor substrate, at least one transistor and a control circuit. One of a source/drain of a first transistor in the slew circuit is connected to Vss, the other of the source/drain of the first transistor is connected to the gate and one of a source/drain of a second transistor, the other of the source/drain of the second transistor is connected to the substrate. A control circuit is connected to the gate of the first transistor for controlling the passage of voltage from the one of a source/drain of the first transistor to the substrate via the gate and the one of a source/drain of the second transistor. The sensitivity of the slew circuit can be made programmable by adding one or more more n-channel transistors in stacked diode configuration between the other of the source/drain of the first transistor and the substrate.

REFERENCES:
IBM Tech. Disc. Bul. vol. 28, No. 10, Mar. 1986 "Substrate Bias Generator Utilizing Hole Extraction for Latch-up Prevention of CMOS circuitry".

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