Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Multiple housings
Reexamination Certificate
2007-11-08
2011-11-08
Fahmy, Wael (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Multiple housings
C257S738000, C257S755000, C257SE21008, C257S790000, C257S791000, C257SE23021, C257SE23069, C257SE21508, C257S796000, C438S018000
Reexamination Certificate
active
08053878
ABSTRACT:
A substrate including therein a plurality of conductor layers laminated via insulating layers, the substrate mounting at least one semiconductor integrated circuit, wherein the substrate includes a first electrode terminal connected to the semiconductor integrated circuit, a second electrode terminal connected to a terminal on an upper substrate arranged in a layer over the substrate, and on at least part of the perimeter of the first and second electrode terminals, a third electrode terminal located outside the outer edge of the upper substrate.
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Hirai Hiroshi
Iwamura Hiroki
Ozawa Naoto
Armand Marc
Fahmy Wael
McDermott Will & Emery LLP
Panasonic Corporation
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