Active solid-state devices (e.g. – transistors – solid-state diode – Alignment marks
Reexamination Certificate
2005-04-05
2005-04-05
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Alignment marks
C438S401000, C438S462000, C438S975000
Reexamination Certificate
active
06876092
ABSTRACT:
A substrate provided with an alignment mark in a substantially transmissive process layer overlying the substrate, said mark comprising at least one relatively high reflectance area(s) for reflecting radiation of an alignment beam of radiation, and relatively low reflectance areas for reflecting less radiation of the alignment beam, wherein the high reflectance area(s) is (are) segmented in first and second directions both directions being substantially perpendicular with respect to each other so that the high reflectance areas comprise predominantly rectangular segments.
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ASML Netherlands B.V.
Flynn Nathan J.
Mandala Jr. Victor A.
Pillsbury & Winthrop LLP
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