Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Having substrate registration feature
Reexamination Certificate
2006-02-21
2008-12-09
Nguyen, Tuan H (Department: 2813)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Having substrate registration feature
C257S797000
Reexamination Certificate
active
07462548
ABSTRACT:
A substrate provided with an alignment mark in a substantially transmissive process layer overlying the substrate, said mark comprising high reflectance areas for reflecting radiation of an alignment beam of radiation, and low reflectance areas for reflecting less radiation of the alignment beam, wherein the high reflectance areas comprise at least one substantially linear sub-grating. In one example, a substantially linear sub-grating comprises a plurality of spaced square regions.
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ASML Netherlands B.V.
Nguyen Tuan H
Pillsbury Winthrop Shaw & Pittman LLP
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