Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2006-06-06
2006-06-06
Blum, David S. (Department: 2813)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
Reexamination Certificate
active
07056805
ABSTRACT:
A method according to one embodiment includes aligning an alignment mark in a substantially transmissive process layer overlying a substrate, said mark comprising high reflectance areas for reflecting radiation of an alignment beam of radiation, and low reflectance areas for reflecting less radiation of the alignment beam, wherein the low reflectance areas comprise scattering structures for scattering radiation of the alignment beam.
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