Active solid-state devices (e.g. – transistors – solid-state diode – Alignment marks
Reexamination Certificate
2005-02-22
2005-02-22
Blum, David S. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Alignment marks
Reexamination Certificate
active
06858948
ABSTRACT:
A substrate provided with an alignment mark in a substantially transmissive process layer overlying the substrate, said mark comprising high reflectance areas for reflecting radiation of an alignment beam of radiation, and low reflectance areas for reflecting less radiation of the alignment beam, wherein the low reflectance areas comprise scattering structures for scattering and absorbing radiation of the alignment beam.
REFERENCES:
patent: 5151750 (1992-09-01), Magome et al.
patent: 5532091 (1996-07-01), Mizutani
patent: 5917205 (1999-06-01), Mitsui et al.
patent: 6093640 (2000-07-01), Hsu et al.
patent: 6165656 (2000-12-01), Tomimatu
patent: 6180498 (2001-01-01), Geffken et al.
patent: 6301001 (2001-10-01), Unno
patent: 20030026471 (2003-02-01), Adel et al.
patent: 0 389 209 (1990-09-01), None
patent: 0 389 209 (1990-09-01), None
patent: 0 997 782 (2000-05-01), None
patent: 1 162 507 (2001-12-01), None
European Search Report for Application No. 01201956.8, dated Dec. 21, 2001.
European Search Report for EP 03077203.2, dated Jun. 24, 2004.
ASML Netherlands B.V.
Blum David S.
Pillsbury & Winthrop LLP
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