Etching a substrate: processes – Masking of a substrate using material resistant to an etchant
Reexamination Certificate
2007-12-18
2011-12-27
Vinh, Lan (Department: 1713)
Etching a substrate: processes
Masking of a substrate using material resistant to an etchant
C216S040000, C134S001200, C438S716000
Reexamination Certificate
active
08083959
ABSTRACT:
In the present invention, a plurality of rounds of patterning are performed on a substrate. In a patterning system, the substrate on which a first round of patterning has been performed is transferred to a planarizing film forming unit, where a planarizing film is formed above the substrate. The substrate is then transferred to the patterning system and subjected to a second round of patterning. The time from the completion of the forming processing of the planarizing film to the start of the second round of patterning is managed to be constant among the substrates. According to the present invention, in the pattern forming processing of performing a plurality of rounds of patterning, a pattern with a desired dimension can be stably formed above the substrate.
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Japanese Office Action issued Apr. 5, 2011, in Patent Application No. 2006-351555 (with English-language translation).
Kitano Junichi
Kyouda Hideharu
Miyahara Osamu
Tsutsumi Kenji
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Tokyo Electron Limited
Vinh Lan
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