Substrate processing method and substrate processing apparatus

Details Substrate processing method and substrate processing apparatus Substrate processing method and substrate processing apparatus

2011-08-09

2011-08-09

Culbert, Roberts (Department: 1716)

Etching a substrate: processes

Gas phase etching of substrate

Etching a multiple layered substrate where the etching...

C438S738000

Reexamination Certificate

active

07993540

ABSTRACT:
A substrate processing method which is capable of easily removing residue caused by hydrofluoric acid. By the substrate processing method, a substrate is processed which has a thermal oxide film formed by a thermal oxidation process and a BPSG film containing impurities. In an HF gas feeding step, an HF gas is fed toward the substrate, and in a cleaning gas feeding step, a cleaning gas containing at least NH3gas is fed toward the substrate fed with the HF gas.

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Office Action issued Jan. 25, 2011, in Japanese Patent Application No. 2006-180185 (w/English-language translation).

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