Substrate processing method and substrate processing apparatus

Details Substrate processing method and substrate processing apparatus Substrate processing method and substrate processing apparatus

2007-06-22

2011-11-22

Garber, Charles (Department: 2812)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

Reexamination Certificate

active

08062955

ABSTRACT:
A CoWB film is formed as a cap metal on a Cu interconnection line formed on a substrate or wafer W, by repeating a plating step and a post-cleaning step a plurality of times. The plating step is arranged to apply electroless plating containing CoWB onto the Cu interconnection line. The post-cleaning step is arranged to clean the wafer W by use of a cleaning liquid, after the plating step.

REFERENCES:
patent: 2005/0069646 (2005-03-01), Inoue et al.
patent: 2005/0095830 (2005-05-01), Weidman et al.
patent: 2006/0234503 (2006-10-01), Yamada et al.
patent: 2007/0004202 (2007-01-01), Fujii
patent: 2008/0314870 (2008-12-01), Inoue et al.
patent: 61 87875 (1986-05-01), None
patent: 2000 58487 (2000-02-01), None
patent: 2000 178753 (2000-06-01), None
patent: 2000-328256 (2000-11-01), None
patent: 2001-73157 (2001-03-01), None
patent: 2003 179058 (2003-06-01), None
patent: 2003 264159 (2003-09-01), None
patent: 2006 9131 (2006-01-01), None
patent: 2006 93357 (2006-04-01), None
patent: 2006 111938 (2006-04-01), None
patent: WO 2008/001698 (2008-01-01), None
Office Action issued Oct. 13, 2010, in Taiwan Patent Application No. 096123117 (with partial English translation).
Office Action issued Sep. 7, 2010, in Japan Patent Application No. 2008-522550 (with English translation).
Office Action issued Sep. 7, 2010, in Japan Patent Application No. 2008-522551 (with English translation).
Office Action issued Dec. 23, 2010, in Taiwan Patent Application No. 096123118 (with partial English translation).

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