Cleaning and liquid contact with solids – Processes – Using sequentially applied treating agents
Reexamination Certificate
2006-03-31
2010-10-05
Markoff, Alexander (Department: 1711)
Cleaning and liquid contact with solids
Processes
Using sequentially applied treating agents
C134S026000, C134S033000, C134S036000, C134S037000, C134S902000
Reexamination Certificate
active
07806989
ABSTRACT:
A substrate (W) is processed with the use of a process liquid such as a deionized water. Then, a first fluid which is more volatile than the process liquid is supplied to an upper surface of the substrate (W) from a fluid nozzle (12) to form a liquid film. Next, a second fluid which is more volatile than the process liquid is supplied to the upper surface of the substrate (W) from the fluid nozzle (12), while the wafer (W) is being rotated. During this supply operation, a supply position (Sf) of the second fluid to the substrate (W) is moved radially outward from a rotational center (Po) of the substrate (W). As a result, it is possible to prevent the generation of particles on the substrate (W) after it is dried by using the first and second fluids.
REFERENCES:
patent: 5882433 (1999-03-01), Ueno
patent: 5882466 (1999-03-01), Grootaert et al.
patent: 6004047 (1999-12-01), Akimoto et al.
patent: 6092937 (2000-07-01), Snodgrass et al.
patent: 6247479 (2001-06-01), Taniyama et al.
patent: 6333275 (2001-12-01), Mayer et al.
patent: 6491764 (2002-12-01), Mertens et al.
patent: 6834440 (2004-12-01), Lee
patent: 6863741 (2005-03-01), Orii et al.
patent: 7543593 (2009-06-01), Orii et al.
patent: 2001/0004878 (2001-06-01), Sakai et al.
patent: 2002/0007844 (2002-01-01), Orii et al.
patent: 2007/0017555 (2007-01-01), Sekiguchi et al.
patent: 2007/0131256 (2007-06-01), Nanba et al.
patent: 2007/0223342 (2007-09-01), Orii et al.
patent: 2008/0093340 (2008-04-01), Nakamori et al.
patent: 02-046728 (1990-02-01), None
patent: 04-179227 (1992-06-01), None
patent: 6-9130 (1994-02-01), None
patent: 09-038595 (1997-02-01), None
patent: 09-069488 (1997-03-01), None
patent: 9-293702 (1997-11-01), None
patent: 11-233481 (1999-08-01), None
patent: 2000-058498 (2000-02-01), None
patent: 2001-053051 (2001-02-01), None
patent: 2002-057088 (2002-02-01), None
patent: 2002-110612 (2002-04-01), None
patent: 2003-197590 (2003-07-01), None
patent: 2003-229404 (2003-08-01), None
patent: 2005-159191 (2005-06-01), None
patent: 03/007348 (2003-11-01), None
patent: 2005/050724 (2005-06-01), None
Japanese Office Action issued on Jan. 19, 2010 for Japanese Patent Application No. 2005-380090 with English translation.
Notification of Transmittal of Translation of the International Preliminary Report on Patentability (Form PCT/IB/338) in connection with PCT/JP2005/018770, dated Jan. 2004.
International Preliminary Report on Patentability (Form PCT/IB/373) in connection with PCT/JP2005/018770, dated Jan. 2004.
Translation of Written Opinion (Form PCT/ISA/237) in connection with PCT/JP2005/018770, dated Jan. 2004.
PCT Second and Supplementary Notice Informing the Applicant of the Communication of the International Application (Form PCT/IB/308) (Second and Supplementary Notice) in connection with PCT/JP2005/018770, dated Jan. 2004.
Notification of Reasons for Rejection issued on Jan. 23, 2009.
Supplementary European Search Report for Application No. EP 05 79 3595 issued Jul. 14, 2009.
Machine Generated Translation of JP 2002-057088, published Feb. 22, 2002.
PCT Notification of Transmittal of Translation of the International Preliminary Examination Report (Form PCT/IB/338) dated Jan. 2004.
PCT International Preliminary Report on Patentability (Form PCT/IB/373) dated Jan. 2004.
PCT Written Opinion of the International Searching Authority (Form/ISA/237) dated Apr. 2005.
Japanese Office Action issued on May 14, 2009 for Japanese Patent Application No. 2005-283390 with English translation.
International Search Report ( PCT/ISA/210).
Ohno Hiroki
Sekiguchi Kenji
Tanaka Satoru
Uchida Noritaka
Markoff Alexander
Smith , Gambrell & Russell, LLP
Tokyo Electron Limited
LandOfFree
Substrate processing method and substrate processing apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Substrate processing method and substrate processing apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Substrate processing method and substrate processing apparatus will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4151767