Substrate processing method and apparatus

Details Substrate processing method and apparatus Substrate processing method and apparatus

2007-11-27

2007-11-27

Alanko, Anita (Department: 1765)

Etching a substrate: processes

Nongaseous phase etching of substrate

Projecting etchant against a moving substrate or controlling...

C216S084000, C216S099000, C134S032000, C134S033000, C134S095100

Reexamination Certificate

active

10812102

ABSTRACT:
The invention relates to a process including a chemical liquid treatment and a rinse liquid treatment on a substrate, more particularly to a technique for reducing consumption of a chemical liquid while achieving uniform process and preventing particle generation. In a specific embodiment, the process is performed for removing a silicon oxide film formed on a silicon wafer. The process includes three subsequently performed steps, in which (1) diluted hydrofluoric acid (DHF), (2) DHF and de-ionized water (DIW), (3) DIW are supplied, respectively, onto a rotating wafer. Transition from step (1) to step (2) is done immediately before the hydrophilic silicon oxide film is dissolved to expose the underlying hydrophobic silicon layer.

REFERENCES:
patent: 6096233 (2000-08-01), Taniyama et al.
patent: 6333275 (2001-12-01), Mayer et al.
patent: 6817790 (2004-11-01), Toshima et al.
patent: 4-287922 (1992-10-01), None
patent: 04287922 (1992-10-01), None
patent: 11067649 (1999-03-01), None
patent: 2001284206 (2001-10-01), None

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