Substrate processing method

Details Substrate processing method Substrate processing method

2007-12-18

2007-12-18

Ahmed, Shamim (Department: 1765)

Etching a substrate: processes

Nongaseous phase etching of substrate

C216S088000, C216S089000, C216S095000, C216S096000, C216S105000, C252S079100, C252S079300, C451S041000

Reexamination Certificate

active

10755314

ABSTRACT:
A substrate processing enables etching of a barrier metal film at around room temperature without application of a mechanical load and without excessive etching of a necessary portion of copper. The substrate processing flattens a copper film and a barrier metal film, both exposed on a surface of a substrate, by using an etching liquid capable of adjusting the etching rate ratio between the copper film and the barrier metal film.

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