Semiconductor device manufacturing: process – With measuring or testing
Reexamination Certificate
2009-07-29
2010-11-02
Garber, Charles D (Department: 2812)
Semiconductor device manufacturing: process
With measuring or testing
C438S005000, C438S009000, C438S128000, C257SE21525, C257SE21529, C257SE21530
Reexamination Certificate
active
07824931
ABSTRACT:
In a substrate processing control method, a first process acquires a first-reflectance-spectrum of a beam reflected from the first-fine-structure and a second-reflectance-spectrum of a beam reflected from the second-fine-structure for each of varying-pattern-dimensions of the first-fine-structure when the pattern-dimension of the first-fine-structure is varied. A second process acquires reference-spectrum-data for each of the varying-pattern-dimensions of the first-fine-structure by overlapping the first-reflectance-spectrum with the second-reflectance-spectrum. A third process actually measures beams reflected from the first and the second-fine-structure, respectively, after irradiating light beam on to the substrate and acquiring reflectance-spectrums of the actual-measured beams as actual-measured spectrum data. A fourth process compares the actual-measured spectrum data with the respective reference-spectrum data and acquiring, as the measured pattern-dimension, one of the varying-pattern-dimensions corresponding to reference-spectrum data that is closely matches with the actual-measured spectrum data. A final process ends the processing of the substrate if the measured pattern-dimension reaches a value.
REFERENCES:
patent: 2007/0221258 (2007-09-01), Saito et al.
patent: 2008/0070327 (2008-03-01), Ogasawara et al.
patent: 2008/0078948 (2008-04-01), Saito
patent: 2006-86168 (2006-03-01), None
Saito Susumu
Shimizu Akitaka
Garber Charles D
Lee Cheung
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Tokyo Electron Limited
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