Metal working – Barrier layer or semiconductor device making
Reexamination Certificate
2000-02-22
2001-07-24
Graybill, David E. (Department: 2814)
Metal working
Barrier layer or semiconductor device making
Reexamination Certificate
active
06264706
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus for manufacturing a semiconductor device or a liquid crystal display device.
2. Description of the Related Art
In many of the conventional substrate processing apparatus of this type, there is provided a load lock chamber which is connected to a substrate processing chamber. In such a load lock chamber, a moving mechanism for moving substrates which are to be processed, such as semiconductor wafers or glass substrates, is generally provided.
However, with the substrate processing apparatus including a load lock chamber provided with a moving mechanism therein, there is a problem that semiconductor wafers, glass substrates or the like are contaminated by particles generated from the moving mechanism.
SUMMARY OF THE INVENTION
It is, therefore, a main object of the present invention to solve the problem that particles generated from the moving mechanism contaminate substrates such as semiconductor wafers, in the load lock chamber provided with the moving mechanism therein, and to provide a substrate processing apparatus having a load lock chamber in which a highly cleaned region can be formed.
According to a first aspect of the present invention, there is provided a substrate processing apparatus, comprising:
a substrate processing chamber for processing a substrate;
a load lock chamber;
gas supply means for supplying gas into the load lock chamber;
exhaust means for exhausting the load lock chamber;
a moving mechanism provided in the load lock chamber and capable of moving the substrate;
local exhaust means capable of locally exhausting a dust generating portion of the moving mechanism; and
a flow rate controlling device provided in at least one of the gas supply means, the exhaust means and the local exhaust means.
According to a second aspect of the present invention, there is provided a substrate processing apparatus, comprising:
a substrate processing chamber for processing a substrate;
a load lock chamber;
gas supply means for supplying gas into the load lock chamber;
exhaust means for exhausting the load lock chamber;
a moving mechanism provided within the load lock chamber and capable of moving the substrate;
local exhaust means capable of locally exhausting a dust generating portion of the moving mechanism; and
a flow rate measuring device for measuring an exhaust amount of the local exhaust means.
According to a third aspect of the present invention, there is provided a substrate processing apparatus, comprising:
a substrate processing chamber for processing a substrate;
a load lock chamber;
gas supply means for supplying gas into the load lock chamber;
exhaust means for exhausting the load lock chamber;
a moving mechanism provided within the load lock chamber and capable of moving the substrate;
a first vacuum exhaust line to be connected to a vacuum pump;
a second vacuum exhaust line which is communicated with the substrate processing chamber and the first vacuum exhaust line;
local exhaust means which is capable of locally exhausting a dust generating portion of the moving mechanism, and is communicated with the first vacuum exhaust line;
a valve connected to an intermediate portion of the local exhaust means; and
control means capable of controlling the valve;
wherein during processing of the substrate in the substrate processing chamber, the control means controls the valve to be closed.
According to a fourth aspect of the present invention, there is provided a substrate processing method, using a substrate processing apparatus comprising:
a substrate processing chamber for processing a substrate;
a load lock chamber;
gas supply means for supplying gas into the load lock chamber;
exhaust means for exhausting the load lock chamber;
a moving mechanism provided within the load lock chamber and capable of moving the substrate;
local exhaust means capable of locally exhausting a dust generating portion of the moving mechanism; and
a flow rate control device provided in at least one of the gas supply means, the exhaust means and the local exhaust means;
the substrate processing method comprising the steps of:
moving the substrate by utilizing the moving mechanism, while controlling pressure within the load lock chamber by supplying gas into the load lock chamber by the gas supply means, locally exhausting the dust generating portion by the local exhaust means, exhausting the gas within the load lock chamber by the exhaust means, and controlling flow rate of at least one of the gas supply means, the exhaust means and the local exhaust means by means of the flow rate control device; and
processing the substrate in the substrate processing chamber.
REFERENCES:
patent: 4990047 (1991-02-01), Wagner et al.
patent: 5162047 (1992-11-01), Wada et al.
patent: 5223001 (1993-06-01), Saeki
patent: 5277215 (1994-01-01), Yanagawa et al.
patent: 5303482 (1994-04-01), Yamashita et al.
patent: 5445491 (1995-08-01), Nakagawa et al.
patent: 5697749 (1997-12-01), Iwabuchi et al.
patent: 61-203290 (1986-09-01), None
patent: 62-068294 (1987-03-01), None
patent: 62-098740 (1987-05-01), None
patent: 62676 U (1994-01-01), None
Graybill David E.
Kokusai Electric Co. Ltd.
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