Substrate processing apparatus, substrate processing method...

Details Substrate processing apparatus, substrate processing method... Substrate processing apparatus, substrate processing method...

2008-08-13

2010-06-15

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Having organic semiconductive component

C438S422000, C438S758000, C438S780000, C257SE21271, C257SE21278

Reexamination Certificate

active

07736942

ABSTRACT:
A substrate processing apparatus is provided to enable to efficiently remove an oxide layer and an organic material layer. A third process unit (36) of a substrate processing apparatus (10) includes a box-shaped process vessel (chamber) (50), a nitrogen gas supply system (190) and an ozone gas supply system (191). The ozone gas supply system (191) includes an ozone gas supply unit (195) and an ozone gas supply pipe (196) connected to the ozone gas supply unit (195). The ozone gas supply pipe (196) has an ozone gas supply hole (197) having an opening arranged opposite to a wafer (W). The ozone gas supply unit (195) supplies an ozone (O3) gas into the chamber (50) through the ozone gas supply hole (197) via the ozone gas supply pipe (196).

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