Radiation imagery chemistry: process – composition – or product th – Including control feature responsive to a test or measurement
Reexamination Certificate
2011-01-04
2011-01-04
Young, Christopher G (Department: 1795)
Radiation imagery chemistry: process, composition, or product th
Including control feature responsive to a test or measurement
C430S313000, C430S330000, C355S027000, C355S030000, C396S611000
Reexamination Certificate
active
07862966
ABSTRACT:
A pattern forming system1is configured to execute a series of processes, which includes a first heat process for performing a heat process on a substrate W after a resist liquid coating process, a light exposure process for performing light exposure on a resist film in accordance with a predetermined pattern, a second heat process for promoting a chemical reaction in the resist film after the light exposure, a developing process for developing the resist film after the light exposure, and an etching process for etching an oxide film by use of a resist pattern formed by the developing process as a mask. The system includes a checking apparatus400configured to measure and check a state of a pattern formed after the etching process, and a control section500configured to use a check result to set a condition for the first heat process and/or the second heat process so as to cause the state of the pattern to be uniform on a surface of the substrate W after the etching process.
REFERENCES:
patent: 6402509 (2002-06-01), Ookura et al.
patent: 6644965 (2003-11-01), Ookura et al.
patent: 6984477 (2006-01-01), Ogata et al.
patent: 7488127 (2009-02-01), Ogata et al.
patent: 7510341 (2009-03-01), Hayasaki et al.
patent: 2003/0008242 (2003-01-01), Schedel et al.
patent: 7 211630 (1995-08-01), None
patent: 2001 143850 (2001-05-01), None
patent: 2002 190446 (2002-07-01), None
patent: 2003 45767 (2003-02-01), None
patent: 2005 26362 (2005-01-01), None
Ogata Kunie
Tanaka Michio
Tomita Hiroshi
Uemura Ryoichi
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Tokyo Electron Limited
Young Christopher G
LandOfFree
Substrate-processing apparatus, substrate-processing method,... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Substrate-processing apparatus, substrate-processing method,..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Substrate-processing apparatus, substrate-processing method,... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2729669