Substrate processing apparatus having a gas heating tube

Coating apparatus – Gas or vapor deposition – With treating means

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Details

118715, 219390, C23C 1600, C23C 16455

Patent

active

061396419

ABSTRACT:
A substrate processing apparatus comprises a heating member, a reaction tube body provided in the heating member and having a first gas introducing section and a gas exhausting section, a substrate holder disposed in the reaction tube body for horizontally holding a substrate within the reaction tube body between the first gas introducing section and the gas exhausting section, a gas heating tube provided in the heating member along the reaction tube body, and having a second gas introducing section and a gas discharging section which is in communication with the first gas introducing section of the reaction tube body, the gas heating tube being arranged such that a gas flowing in the gas heating tube first flows form the first gas introducing section side toward the gas exhausting section side, and then returns to flow from the gas exhausting section side toward the first gas introducing section side.

REFERENCES:
patent: 5279670 (1994-01-01), Watanabe et al.
patent: 5336327 (1994-08-01), Lee
patent: 5551982 (1996-09-01), Anderson et al.
Wolf, S. and R.N. Tauber, Silicon Processing for the VLSI Era vol. 1--Process Technology pp. 167-168, 1986.
Translation of Official Notice of Preliminary Rejection; Korean Patent Appln. No. 10-1997-0026874; "Substrate Processing Apparatus"; Jun. 14, 2000.

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