Substrate processing apparatus and substrate processing...

Details Substrate processing apparatus and substrate processing... Substrate processing apparatus and substrate processing...

2006-03-28

2006-03-28

Lu, Jiping (Department: 3749)

Drying and gas or vapor contact with solids

Apparatus

With automatic control

C034S570000, C034S426000, C134S153000, C134S198000, C134S902000

Reexamination Certificate

active

07017281

ABSTRACT:
A first gas nozzle and a second gas nozzle are fixedly provided in the vicinity of the forward end of a nozzle arm. The nozzle arm is rotated along a locus R while a substrate rinsed with deionized water is rotated, for discharging nitrogen gas from the first and second gas nozzles. Visible moisture is loosely expelled from the upper surface of the substrate by spraying the nitrogen gas from the first gas nozzle, and moisture slightly remaining on a fine pattern or the like can also be completely removed by spraying the nitrogen gas from the second gas nozzle to the same region of the substrate as that sprayed with the nitrogen gas by the first gas nozzle. Consequently, the surface of the substrate can be stably and reliably dried. Thus, a substrate processing apparatus capable of stably and reliably drying the surface of the substrate is provided.

REFERENCES:
patent: 5803970 (1998-09-01), Tateyama et al.
patent: 5967156 (1999-10-01), Rose et al.
patent: 6821349 (2004-11-01), Mertens et al.
patent: 10-172951 (1998-06-01), None
patent: 11-111666 (1999-04-01), None
patent: 11-233481 (1999-08-01), None
English translation of Abstract for Japanese Patent No. 11-111666.
English translation of Abstract for Japanese Patent No. 10-172951.

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