Substrate processing apparatus and method for manufacturing...

Coating apparatus – Gas or vapor deposition

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C432S237000, C432S244000, C219S444100

Reexamination Certificate

active

08057599

ABSTRACT:
A CVD device has a reaction furnace (39) for processing a wafer (1); a seal cap (20) for sealing the reaction furnace (39) hermetically; an isolation flange (42) opposite to the seal cap (20); a small chamber (43) formed by the seal cap (20), the isolation flange (42), and the wall surface in the reaction furnace (39); a feed pipe (19b) for supplying a first gas to the small chamber (43); an outflow passage (42a) provided in the small chamber (43) for allowing the first gas to flow into the reaction furnace (39); and a feed pipe (19a) provided downstream from the outflow passage (42a) for supplying a second gas into the reaction furnace (39). Byproducts such as NH4Cl are prevented from adhering to low temperature sections such as the furnace opening and therefore the semiconductor device production yield is therefore increased.

REFERENCES:
patent: 5162047 (1992-11-01), Wada et al.
patent: 5478397 (1995-12-01), Shibata et al.
patent: 5482559 (1996-01-01), Imai et al.
patent: 6187102 (2001-02-01), Yamamoto
patent: 6238488 (2001-05-01), Fujita et al.
patent: 6953739 (2005-10-01), Yang et al.
patent: 2002/0094502 (2002-07-01), Kogano et al.
patent: 2006/0150904 (2006-07-01), Ozaki et al.
patent: 1152461 (2001-11-01), None
patent: 07-006965 (1995-01-01), None
patent: 8-115883 (1996-05-01), None
patent: 09-092627 (1997-04-01), None
patent: 11121389 (1999-04-01), None
patent: 2000-223432 (2000-08-01), None
patent: 2002-110562 (2002-04-01), None
patent: 2002110562 (2002-04-01), None
patent: 2002-280373 (2002-09-01), None
Computer generated English Translation of JP11-121389 publishd Apr. 30, 1999 (6 pages).
Machine Generated English Translation of JP2002-110562, published Apr. 2002.
Japanese Office Action dated Jun. 7, 2011 issued in counterpart application No. 2008-200033 with English translation (6 pages).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Substrate processing apparatus and method for manufacturing... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Substrate processing apparatus and method for manufacturing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Substrate processing apparatus and method for manufacturing... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4304322

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.