Substrate potential generating circuit

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

307304, 307296R, 357 236, H01L 2710, H03L 100, H03K 3354

Patent

active

046957464

ABSTRACT:
A substrate potential generating circuit for a semiconductor integrated circuit in which, in addition to a conventional circuit for supplying a bias current to the substrate, at least two additional bias current supplying circuits are provided. With this configuration, when the substrate potential reaches its final level, the substrate bias current from the conventional circuit is interrupted to reduce the power consumption of the integrated circuit.

REFERENCES:
patent: 4430581 (1984-02-01), Mogi et al.
patent: 4455628 (1984-06-01), Ozaki et al.
patent: 4494223 (1985-01-01), Reddy et al.
patent: 4553047 (1985-11-01), Dillinger et al.
patent: 4581546 (1986-04-01), Allan
patent: 4585954 (1986-04-01), Hashimoto et al.
patent: 4628215 (1986-12-01), Lou

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