1990-05-15
1990-12-25
Munson, Gene M.
357 86, H01L 2702
Patent
active
049807455
ABSTRACT:
Diffusion layers are formed in a surface region of an N-type substrate. The diffusion layers are interconnected by means of an Al wiring layer. A P-well is formed in the substrate. A power source potential is connected to the substrate and a reference potential is connected to the P-well 17. The Al wiring layer is connected to the power source potential via the substrate to detect the power source potential.
REFERENCES:
patent: 3720848 (1971-07-01), Schmidt
patent: 4336489 (1982-06-01), Frederiksen
patent: 4628340 (1986-12-01), Hashimoto
patent: 4823314 (1989-04-01), Sharp
patent: 4829359 (1989-05-01), O et al.
Kabushiki Kaisha Toshiba
Munson Gene M.
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