Substrate patterning for multi-gate transistors

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

Reexamination Certificate

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C438S723000, C438S724000, C438S725000, C438S734000, C438S735000, C438S738000, C438S743000, C438S744000, C216S067000

Reexamination Certificate

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07666796

ABSTRACT:
Some embodiments of the present invention include apparatuses and methods relating to improved substrate patterning for multi-gate transistors.

REFERENCES:
patent: 5851927 (1998-12-01), Cox et al.
patent: 6696365 (2004-02-01), Kumar et al.
patent: 6940170 (2005-09-01), Parikh
patent: 7005366 (2006-02-01), Chau et al.
patent: 2005/0121412 (2005-06-01), Beintner et al.
patent: 2006/0118876 (2006-06-01), Lee et al.

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