Substrate output for a semiconductor device and a method of fabr

Details Substrate output for a semiconductor device and a method of fabr Substrate output for a semiconductor device and a method of fabr

1990-12-26

1992-06-09

Hille, Rolf

Fishing, trapping, and vermin destroying

357 52, 437 38, H01L 2704

Patent

active

051211947

ABSTRACT:
In a semiconductor device, a first diffusion region on a surface of an output region for a substrate electric potential, and an element segregation third diffusion region under a field insulating layer, are electrically connected together through a second diffusion region. Thus, the substrate electric potential can be easily output at the surface of the output region, even if the first diffusion region on the surface of the output region is formed shallow by a fabrication process at low temperature due to fine designing of the semiconductor device. A patterning process of the output region in the form of a protruded shape is also required, but the process is completed through a procedure using only one ion implantation and one low temperature thermal oxidation, thereby dramatically simplifying the fabrication process.

REFERENCES:
patent: 4663825 (1987-05-01), Maeda
patent: 4893164 (1990-01-01), Shirato
patent: 5019888 (1991-05-01), Scott et al.

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