Substrate on which bumps are formed and method of forming the sa

Details Substrate on which bumps are formed and method of forming the sa Substrate on which bumps are formed and method of forming the sa

1998-04-01

1999-06-22

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

216 11, 216 14, 216 52, 438694, H01L 2100, B44C 122

Patent

active

059142740

ABSTRACT:
A bi-layer bump comprises a base layer composed of sprayed aluminum thick film having a thickness of about 20 .mu.m formed to cover the periphery of the passivation film formed on each pad electrode, a surface layer composed of sprayed copper thick film having a thickness of about 30 .mu.m formed on the base layer. According to the above-mentioned structure, a substrate on which bumps are formed which has an excellent electric property and connecting reliability, wherein an interlayer insulating layer, an active layer and a multi-layer wiring can be provided under the pad electrode can be obtained.

REFERENCES:
patent: 4887760 (1989-12-01), Yoshino et al.
patent: 5246880 (1993-09-01), Reele et al.
patent: 5336547 (1994-08-01), Kawakita et al.
patent: 5487999 (1996-01-01), Farnworth
"High Reliability Chip-Joining Process", IBM Technical Disclosure Bulletin, vol. 33, No. 12, pp. 237-238.

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