Substrate of single crystal of oxide, device using said substrat

Superconductor technology: apparatus – material – process – High temperature devices – systems – apparatus – com- ponents,... – Superconductor next to layer containing nonsuperconducting...

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427 62, 4271263, 428697, 428930, 505701, 505729, 505741, 505451, 505473, 505476, 505325, 505452, B05D 512, B32B 1800, C30B 2502, H01L 3900

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053148711

ABSTRACT:
According to the present invention, when a superconductive thin film is formed on a substrate of a single crystal, a compound having a composition of SrNdGaO.sub.4 and a K.sub.2 NiF.sub.4 type crystal structure is used as a material employable for the substrate. Alternatively, a single crystal composed of an oxide in which Ca, La and Cr are added to the foregoing compound is used as a material employable for the substrate. Then, a superconductive thin film composed of an oxide is formed on the substrate by employing an epitaxial growing method. Thus, the present invention makes it possible to provide a superconductive material having an excellent property of lattice alignment, a stable and high critical superconductivity temperature and a stable critical superconductivity electric current.

REFERENCES:
patent: 4199396 (1980-04-01), Brandle
patent: 4379853 (1983-04-01), Mateika
patent: 4454206 (1984-06-01), Mateika
patent: 4820445 (1989-04-01), Piekarczyk
International Application, International Publication No. WO 90/04857, Claim 1., May 1990.
"Superconducting Thin Films of Tl.sub.2 Ca.sub.2 Ba.sub.2 Cu.sub.3 Oy and Tl.sub.2 Ca.sub.2 Ba.sub.2 Cu.sub.3 OY'," Ginley, Physical vol. 156, pp. 592-598. Nov. 1988.
Joint Committee on Powder Diffraction Standards No. 24-1191, Gordon, 1974. (No Month available).

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