Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Having substrate registration feature
Reexamination Certificate
2007-08-07
2007-08-07
Andujar, Leonardo (Department: 2826)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Having substrate registration feature
C438S975000, C257S797000
Reexamination Certificate
active
10724403
ABSTRACT:
In a method according to one embodiment of the invention, a plurality of markers are printed in resist on a substrate at a range of angles relative to a crystal axis of the substrate. The markers are etched in to the substrate using an anisotropic etch process, such that after the etch the apparent positions of the markers are dependent on their orientation relative to the crystal axis. The apparent positions of the markers are measured, and from this information the orientation of the crystal axis is derived.
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Keijsers Gerardus Johannes Joseph
Ten Berge Peter
Andujar Leonardo
ASML Netherlands B.V.
Pillsbury Winthrop Shaw & Pittman LLP
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