Substrate material for mounting semiconductor device thereon and

Details Substrate material for mounting semiconductor device thereon and Substrate material for mounting semiconductor device thereon and

1991-04-17

1992-12-01

Hunt, Brooks H.

Specialized metallurgical processes, compositions for use therei

Compositions

Consolidated metal powder compositions

75248, 419 27, 419 32, 419 38, 419 47, B22F 900

Patent

active

051676974

ABSTRACT:
A substrate material for mounting a semiconductor device thereon, comprises a skeleton prepared by liquid-phase presintering the composition of W and/or Mo powder in which Cu and/or Ag powder is uniformly dispersed, and a Cu and/or Ag phase infiltrated into the pores of the skeleton. The total amount of Cu and/or Ag in the product is adjusted to 10-50 vol. %. The substrate material is manufactured by two steps of: presintering the Cu and/or Ag-contng. powdery composition to form a porous skeleton, and infiltrating Cu and/or Ag into the pores of the skeleton. Since the skeleton contng. Cu and/or Ag exhibits an excellent affinity to molten Cu and/or Ag, the infiltration of molten Cu and/or Ag is performed uniformly into every nook and corner of the skeleton. Consequently, the obtained product is free from pores which would deteriorate a junction plane between the substrate and a semiconductor device mounted thereon.

REFERENCES:
patent: 3382066 (1968-05-01), Kenney et al.
patent: 3440043 (1969-04-01), Zdanuk et al.
patent: 3721550 (1973-03-01), Schreiner et al.
patent: 4123265 (1978-10-01), Takahashi et al.
patent: 4153755 (1979-05-01), Rothkegel et al.
patent: 4271372 (1981-06-01), Geldner et al.
patent: 4299889 (1981-11-01), Kato et al.
patent: 4430124 (1984-02-01), Kato
patent: 4640999 (1987-02-01), Kashiwagi et al.

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