Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Thinning of semiconductor substrate
Reexamination Certificate
2007-08-14
2007-08-14
Thai, Luan (Department: 2891)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Thinning of semiconductor substrate
C438S455000, C257SE21570, C257SE21567, C257SE21569
Reexamination Certificate
active
10841621
ABSTRACT:
An SOI substrate which has a thick SOI layer is first prepared. Then, the SOI layer is thinned to a target film thickness using as a unit a predetermined thickness not more than that of one lattice. This thinning is performed by repeating a unit thinning step which includes an oxidation step of oxidizing the surface of the SOI layer by the predetermined thickness not more than that of one lattice and a removal step of selectively removing silicon oxide formed by the oxidation. The SOI layer of the SOI substrate is chemically etched by supplying a chemical solution to the SOI layer, and the film thickness of the etched SOI layer is measured. When the measured film thickness of the SOI layer has a predetermined value, a process of chemically etching the SOI layer ends.
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Ito Masataka
Kakizaki Yasuo
Miyabayashi Hiroshi
Moriwaki Ryuji
Takanashi Kazuhito
Canon Kabushiki Kaisha
Fitzpatrick ,Cella, Harper & Scinto
Thai Luan
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