Substrate manufacturing method

Details Substrate manufacturing method Substrate manufacturing method

2006-03-07

2006-03-07

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Thinning of semiconductor substrate

C438S480000

Reexamination Certificate

active

07008860

ABSTRACT:
This invention provides a method of manufacturing a substrate having a thin buried insulating film. An insulating layer (12) is formed on a single-crystal Si substrate (11). Ions are implanted into the substrate (11) through the insulating layer (12) to form an ion-implanted layer (13). The insulating layer (12) is thinned down to form a thin insulating layer (12a). A thus prepared first substrate is placed on a second substrate (20) to form a bonded substrate stack (30). After that, the bonded substrate stack (30) is split at the ion-implanted layer (13).

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