Stock material or miscellaneous articles – Composite – Of silicon containing
Patent
1989-07-21
1991-11-05
Ryan, Patrick J.
Stock material or miscellaneous articles
Composite
Of silicon containing
428428, 428432, 428688, 428698, 428901, B32B 900
Patent
active
050631136
ABSTRACT:
A substrate has a semiconductor-on-insulator structure. The substrate has a base substrate, an insulator layer provided on the base substrate, an active substrate provided on the insulator layer and having gettering sites, and an active layer provided on the active substrate and made of a semiconductor. The gettering sites under the active layer eliminate crystal defects and impurities generated in the active layer during the semiconductor device production in which elements are formed in the active layer.
REFERENCES:
patent: 4226914 (1980-10-01), Terner et al.
patent: 4288495 (1981-09-01), Terner et al.
patent: 4371403 (1983-02-01), Ikubo et al.
patent: 4499147 (1985-02-01), Enomoto et al.
patent: 4608095 (1986-08-01), Hill
patent: 4608096 (1986-08-01), Hill
patent: 4666532 (1987-05-01), Korb et al.
patent: 4781766 (1988-11-01), Barnett et al.
patent: 4789421 (1988-12-01), Umeno et al.
IBM Technical Disclosure Bulletin, vol. 16, No. 4, Sep. 1973, p. 1063, "Gettering Technique Resulting in Defect-Free Devices", By M. R. Poponaik and T. H. Yeh.
Fujitsu Limited
Lim Amara E.
Ryan Patrick J.
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