Etching a substrate: processes – Nongaseous phase etching of substrate – Etching using radiation
Reexamination Certificate
2011-04-19
2011-04-19
Norton, Nadine G (Department: 1713)
Etching a substrate: processes
Nongaseous phase etching of substrate
Etching using radiation
C216S018000, C361S760000, C257S687000, C257S773000, C257S774000
Reexamination Certificate
active
07927499
ABSTRACT:
A substrate having a blind hole and a method for forming the blind hole. The method includes: (a) providing a substrate having a lower dielectric layer, a copper layer, and an upper dielectric layer; and (b) forming an upper dielectric layer through hole and a copper layer through hole by etching through the upper dielectric layer and the copper layer with laser, and forming a cavity on the lower dielectric layer by using the laser, in which the aperture of the cavity on the upper surface of the lower dielectric layer is larger than that of the copper layer through hole. Therefore, a blind hole space in a shape of a rivet is formed, so that after the blind hole space is electroplated with an electroplating copper layer, the bonding force between the electroplating copper layer and the copper layer is enhanced.
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Advanced Semiconductor Engineering Inc.
Dahimene Mahmoud
Norton Nadine G
Volentine & Whitt P.L.L.C.
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