Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Reexamination Certificate
2011-03-15
2011-03-15
Chambliss, Alonzo (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
C257S758000, C257S774000, C257SE23011, C257SE23145, C175S255000, C175S262000
Reexamination Certificate
active
07906843
ABSTRACT:
A substrate and a method of making a substrate having a functionally gradient coefficient of thermal expansion are described herein. A system having a silicon die, an organic package substrate, and a substrate having a functionally gradient coefficient of thermal expansion, connecting the silicon die and the organic substrate is also described. The coefficient of thermal expansion at the upper surface of the substrate matches the coefficient of thermal expansion of the die, the coefficient of thermal expansion at the lower surface of the substrate matches the coefficient of thermal expansion of the package substrate, and the substrate has one or more coefficients of thermal expansion between the coefficients of thermal expansion of the upper and lower surfaces.
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Blakely , Sokoloff, Taylor & Zafman LLP
Chambliss Alonzo
Intel Corporation
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