Substrate-free light emitting diode

Details Substrate-free light emitting diode Substrate-free light emitting diode

2011-07-05

2011-07-05

Gebremariam, Samuel A (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With reflector, opaque mask, or optical element integral...

C257S099000, C257S100000

Reexamination Certificate

active

07973330

ABSTRACT:
A substrate-free light emitting diode (LED) including an epitaxy layer, a conductive supporting layer, and a first contact pad is provided. The epitaxy layer includes a first type doped semiconductor layer, a light emitting layer, and a second type doped semiconductor layer. The light emitting layer is disposed on the first type doped semiconductor layer, and a portion of the first type doped semiconductor layer is exposed. The second type doped semiconductor layer and the conductive supporting layer are sequentially disposed on the second type doped semiconductor layer. The first contact pad is disposed on the exposed first type doped semiconductor layer and electrically connected thereto. The first contact pad and the conductive supporting layer serving as an electrode are disposed on the same side of the epitaxy layer to avoid the light shielding effects of the electrode to improve the front light emitting efficiency of the LED.

REFERENCES:
patent: 6784463 (2004-08-01), Camras et al.
patent: 6806112 (2004-10-01), Horng et al.
patent: 2005/0133797 (2005-06-01), Seong et al.

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