Substrate for the micro-lithography and process of...

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

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C378S035000

Reexamination Certificate

active

10753220

ABSTRACT:
The invention relates to the manufacture of a substrate which is particularly suitable for EUV micro-lithography and comprises a base layer of low coefficient of thermal expansion (CTE) onto which at least one cover layer made of a semiconductor material is applied. Preferably, the cover layer is a silicon layer, preferably applied by ion beam sputtering. By an additional ion beam figuring treatment substrates of extremely accurate shape and extremely low roughness can be prepared.

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patent: 6159643 (2000-12-01), Levinson et al.
patent: 6352803 (2002-03-01), Tong et al.
patent: 6387572 (2002-05-01), Tong et al.
patent: 2001/0002336 (2001-05-01), Yanagisawa et al.
patent: 2003/0057178 (2003-03-01), Goldstein
patent: 2004/0063004 (2004-04-01), Alkemper et al.
patent: 1 902 432 (1970-09-01), None
patent: WO 02/099818 (2002-12-01), None

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