Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1982-03-15
1983-09-06
Smith, John D.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
29572, 148175, 156613, 156DIG69, 427 74, 427 75, 427 86, 427253, H01C 3106
Patent
active
044027710
ABSTRACT:
A substrate is made for silicon solar cells by heating a sheet of large-grained silicon steel at a temperature of at least about 1300.degree. C. in an atmosphere of hydrogen and tungsten hexafluoride (or hexachloride) at a partial pressure ratio of hydrogen to tungsten hexafluoride of about 3 to about 6 to deposit an epitaxial layer of tungsten on said sheet of silicon steel. Epitaxial silicon can then be deposited in a conventional manner on the layer of epitaxial tungsten.
REFERENCES:
patent: 3911194 (1975-10-01), Dejachy et al.
patent: 3961997 (1976-06-01), Chu
Chu et al., "Polycrystalline Silicon on Coated Steel Substrate", Electrochemical Society, vol. 122, pp. 1681-1685, (1975).
Bryant, "The Adherence of Chemically Vapor Deposited Tungsten Coatings", Chem. Vap. Deposition, Second Int. Conf., Electrochemical Soc., pp. 409-421, (1970).
Faron et al., "Study of the Chemical Vapor Deposition of Tungsten and Molybdenum-Reduction of Flourides at High Temperature and Low Pressure", Third Int. Conf. on Chem. Vapor Deposition, Proceedings of American Nuclear Society, pp. 435-452, (1972).
Nicolet, "Diffusion Barriers in Thin Fibers", Thin Solid Films, vol. 52, (1978), pp. 415-443.
Fuerle R. D.
Smith John D.
Westinghouse Electric Corp.
LandOfFree
Substrate for silicon solar cells does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Substrate for silicon solar cells, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Substrate for silicon solar cells will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1590896