Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2005-06-24
2008-03-04
Weiss, Howard (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257S350000, C257SE27100, C257SE29117
Reexamination Certificate
active
07339189
ABSTRACT:
A substrate for a semiconductor device includes a substrate, a thin film transistor that is provided on the substrate, a wiring line that is provided above the thin film transistor, an interlayer insulating film that electrically isolates the wiring line from at least a semiconductor layer of the thin film transistor, and a contact hole that has a first hole being cut in the interlayer insulating film and extending in a longitudinal direction in plan view on a substrate surface and a plurality of second holes passing through the interlayer insulating film from a bottom of the first hole to reach a surface of the semiconductor layer and being arranged in the longitudinal direction of the first hole. The connect hole connects the wiring line to the semiconductor layer via the interlayer insulating film.
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patent: 2005/0098894 (2005-05-01), Ohtani et al.
patent: 1-102-111 (2001-05-01), None
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Trinh (Vikki) Hoa B
Weiss Howard
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