Substrate for semiconductor apparatus having a composite materia

Details Substrate for semiconductor apparatus having a composite materia Substrate for semiconductor apparatus having a composite materia

1989-07-13

1992-02-04

Gonzalez, Frank

357 45, H01L 2962

Patent

active

050863339

ABSTRACT:
This invention relates to a substrate for mounting a semiconductor chip in an integrated circuit wherein a sintered compact containing copper at 2 to 30 wt. % and tungsten and/or molybdenum is employed as a substrate which efficiently radiates heat developed from the semiconductor chip mounted thereon and said substrate having a thermal expansion coefficient similar to those of semiconductor chip and other enclosure materials.

REFERENCES:
patent: 3097329 (1963-07-01), Siemens
patent: 3204158 (1965-08-01), Schreiner et al.
patent: 3969754 (1976-07-01), Kuniya et al.
patent: 4196442 (1980-04-01), Kuniya et al.
patent: 4427993 (1984-01-01), Fichot
patent: 4680618 (1987-07-01), Kuroda et al.
"New Low-Expansion Alloys for Semiconductor Applications"--Kosco--Solid State Technology, Jan. 1969, pp. 47-49.

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