Substrate for semiconductor apparatus

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H01L 2302

Patent

active

050993100

ABSTRACT:
This invention relates to a substrate for semiconductor apparatus loading a semiconductor chip in integrated circuit apparatus and is characterized in that a sintered compact containing copper of 2 to 30 wt. % in tungsten and/or molybdenum is used as the substrate having the heat radiation capable of efficiently radiating heat developed from the loaded semiconductor chip and thermal expansion coefficient similar to those of semiconductor chip and other enclosure material except for the substrate.

REFERENCES:
patent: 3097329 (1963-07-01), Siemans
patent: 3204158 (1965-08-01), Schreiner et al.
patent: 3969754 (1976-07-01), Kuniya et al.
patent: 4196442 (1980-04-01), Kuniya et al.
patent: 4500904 (1985-02-01), Onuki et al.
patent: 4672417 (1987-06-01), Sugiyama et al.
patent: 4680618 (1987-07-01), Kuroda et al.

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