Substrate for semiconductor apparatus

Details Substrate for semiconductor apparatus Substrate for semiconductor apparatus

1996-04-22

1998-01-13

Jenkins, Daniel J.

Stock material or miscellaneous articles

All metal or with adjacent metals

Having metal particles

428546, 428615, 437902, 437925, 257706, 257707, 257713, 257717, 257720, 419 27, B22F 326, B22F 704, H01L 23373

Patent

active

057089590

ABSTRACT:
This invention relates to a substrate for semiconductor apparatus loading a semiconductor chip in integrated circuit apparatus and is characterized in that a sintered compact containing copper of 2 to 30 wt. % in tungsten and/or molybdenum is used as the substrate having the heat radiation capable of efficiently radiating heat developed from the loaded semiconductor chip and thermal expansion coefficient similar to those of semiconductor chip and other enclosure material except for the substrate.

REFERENCES:
patent: 1552184 (1925-09-01), Adams
patent: 1848437 (1932-03-01), Sieger et al.
patent: 1860793 (1932-05-01), Weiger
patent: 2179960 (1939-11-01), Schwarzkopt
patent: 2763822 (1956-09-01), Frola et al.
patent: 2971251 (1961-02-01), Willemse
patent: 3097329 (1963-07-01), Siemens
patent: 3204158 (1965-08-01), Schreiner et al.
patent: 3353931 (1967-11-01), Zdanuk et al.
patent: 3409974 (1968-11-01), Lueck et al.
patent: 3423203 (1969-01-01), Zdanuk et al.
patent: 3685134 (1972-08-01), Blue
patent: 3969754 (1976-07-01), Kuniya et al.
patent: 4025997 (1977-05-01), Gernihs et al.
patent: 4158719 (1979-06-01), Frantz
patent: 4196442 (1980-04-01), Kuniya et al.
patent: 4340090 (1982-07-01), Honda et al.
patent: 4427993 (1984-01-01), Fichot et al.
patent: 4451540 (1984-05-01), Baird et al.
patent: 4556899 (1985-12-01), Kurihara et al.
patent: 4680618 (1987-07-01), Kuroda et al.
patent: 5086333 (1992-02-01), Osada et al.
patent: 5099310 (1992-03-01), Osada et al.
patent: 5409864 (1995-04-01), Osada et al.
patent: 5525428 (1996-06-01), Osada et al.
Smithells, Tungsten: A Treatise on Its Metallurgy, Properties and Applications, Third Edition, 1952, pp. 260-262.
Nikkan Kogyo, "Powder Metallurgy Application Product," Powder Metallurgy Technical Course No. 8, Jul. 1964, pp. 271.
"Codification of Ceramic Material Techniques," 1979, pp. 344-345.
Goetzel, Treatise on Powder Metallurgy, vol. II, 1950, pp. 203-205.
Moon et al., "Sintering of W-Cu Contact Materials with Ni and Co Dopants," Powder Metallurgy International, vol. 9, No. 1, 1977, pp. 23-24.
Dance et al., "Clad Metal Circuit Board Substrates for Direct Mounting of Ceramic Chip Carriers," Electronic Packaging and Production, Jan. 1982, pp. 228-237.
CMW Inc. Catalog, "Elkonite Series 200," Oct. 1979, pp. 201:1-201:4, 205:1-205:4, 210:1-210:2, 215:1-215:2, 220:1-220:2, 225:1, 230:1, 235:1-235:3, 240:1-240:2.
Hensel et al. "Physical Properties of Metal Compositions with a Refractory Metal Base," Powder Metallurgy, 1942, pp. 483-492.
Samsonov et al., "Activation of the Sintering of Tungsten by the Iron-Group Metals," Soviet Powder Metallurgy And Metal Ceramics, No. 10, Oct. 1969, pp. 804-808.
Agte et al., "Tungsten and Molybdenum," NASA Technical Translation F-135, 1963, pp. 118-119, 215, 260-267.
Acrian Inc. Catalog, "NPN Power Transistor," (Undated).
Meyer, "How to Select Electrical Contacts", Metal Progress, US, vol. 88, Jun. 1965-Dec. 1965, pp. 92-95.
Yih and Wang, Tungsten, Sources, Metallurgy, Properties and Applications, New York and London, 1979, pp. 362-363.
Shinbun, Powder Metallurgy and Sintered Materials, Japan, 1964, pp. 264-267.
Benesovsky, Powder Metallurgy and Sintered Materials, Metallwerk Plansee AG & Co. KG, Germany, 1973, pp. 10-11, 146-156.
ELMET Contact Materials, Metallwerk Plansee AG & Co., Germany, 1977.
Elkonite Data Book, P. R. Mallory & Co., Indianapolis, Ind., 1941, pp. 1-30.
Resistance Welding Data Book, P. R. Mallory & Co., Indianapolis, Ind., 1951, pp. 308-309.
Mallory Catalog, P. R. Mallory & Co., Indianapolis, Ind., 1950, pp. 30-33.
Mallory Product Guide, P. R. Mallory & Co., Indianapolis, Ind., 1962, p. 22.
Elkonite Refractory Metal Composites Catalog, P. R. Mallory & Co., Indianapolis, Ind., 1962.
Elkonite Refractory Metal Composites Catalog, P. R. Mallory & Co., Indianapolis, Ind., 1968.
Elkonite Catalog, Contact Metals Welding Inc., Indianapolis, Ind. 1981, pp. 308-309.
Thermkon Catalog, Contact Metals Welding Inc., Indianapolis, Inc., 1982 (Copyright Registration Sep. 27, 1982).
Thermkon Trademark Registration No. 1,354,948, Aug. 20, 1985.
Thermkon Catalog, Contact Metals Welding Inc., Indianapolis, Ind., 1987.
German, Liquid Phase Sintering, NY and London, 1985, pp. 160-163.
Jones, Fundamental Principles of Power Metallurgy, London, 1960, pp. 504-509, 770-773.
Sands et al., Powder Metallurgy Practice and Applications, London, 1966, pp. 94-95.
Kosco, "New Low Expansion Alloys for Semiconductor Applications", Solid State Technology, Jan., 1969, pp. 47-49.
Hirschhom, Introduction to Powder Metallurgy, NY, 1969, pp. 244-245.
Sebastian et al., "Liquid Phase Sintering", Metallurgy International, vol. 11, No.2, pp. 62-64, 1979.
Naidichi et al., "Densification in Liquid Phase Sintering Under Pressure in the System Tungsten-Copper", translated fro Porosbkovaya Metallurgiya, No. 1 (133) pp. 34-39, Jan. 1974.
Sebastian et al., "Densification in W-Cu Sintered Alloys Produced fro Coreduced Powders", Planseeberichte for Pulvemetallurgie, Bd. 25, No. 2, pp. 84-100, Jun. 1977.

Affiliated with

Also associated with

Rating

Substrate for semiconductor apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Substrate for semiconductor apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Substrate for semiconductor apparatus will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-336011