Substrate for reticle and method of manufacturing the...

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

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C430S011000, C451S041000

Reexamination Certificate

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07579120

ABSTRACT:
In a reticle substrate is used for forming a reticle held on a stepper and has main surfaces opposing each other, side faces, and chamfered surfaces formed between main surfaces and side faces, a flatness-measuring area is defined as an area excluding a peripheral area of a width of 3 mm inwardly laid from a boundary between the main surface and the chamfered surfaces and has a flatness of 0.5 μm or less, and a maximum height from a reference plane falls between −1 and 0 μm at the boundary between the main surface and the chamfered surface.

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German Office Action dated, Jun. 20, 2008.
Masamitsu Itoh, et al., New Concept of Specification for Mask Flatness, Proceedings of SPIE Photomask and Next-Generation Lithography Mask Techonology IX, SPIE vol. 4754 (2002), 43-53.

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