Substrate for nitride semiconductor growth

Details Substrate for nitride semiconductor growth Substrate for nitride semiconductor growth

2007-07-17

2007-07-17

McNeil, Jennifer (Department: 1775)

Stock material or miscellaneous articles

Composite

Of inorganic material

C428S702000, C428S698000

Reexamination Certificate

active

10532782

ABSTRACT:
A substrate for growth of nitride semiconductor capable of obtaining a high-quality nitride semiconductor crystal layer is provided. A substrate for growth of nitride semiconductor for growth of a nitride semiconductor layer on a sapphire substrate (1) according to one embodiment of the invention is provided with an Al2O3layer (2) as separately provided on the sapphire substrate (1), an AlON layer (3) which is the first layer, and an AlN layer (4) which is the second layer. With respect to the first layer and the second layer, the AlON layer (3) and the AlN layer (4) are deposited on the Al2O3layer (2) in this order.

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